SPIE Photonic West 2018 Oral Accepted
I will have an oral presentation with the title of "Simulation of high-power laser diode with improved heat sinking structure using epitaxial liftoff technique" on 29th Jan 2018 at the Moscone center in San Francisco.
More information about SPIE Photonics west
Title
Simulation of high-power laser diode with improved heat sinking structure using epitaxial liftoff technique
Abstract
The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-um-wide rib and a 2000-um long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the fabrication method and its structure with the improved heat sink, without a bulk substrate between an active region and a bottom heat sink. It is possible to obtain by removing a 400-um-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. For the accurate simulation results, we first carefully verify our simulation result using the experiment results with given parameters by the paper (SPIE vol. 5739 doi: 10.1117/12.588730) and also fitting parameters of carrier lifetime of 4 ns and Auger coefficient of 1 × 10-29 cm6/s inside the quantum well region. We present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. The maximum temperature is expected to be reduced by ~ 390 K at the operating current of 8 A, which is ~ 480 K for the normal structure. As a result, we predict that the characteristics of the laser diode are highly improved, including optical power and beam quality etc..
More information about SPIE Photonics west
Title
Simulation of high-power laser diode with improved heat sinking structure using epitaxial liftoff technique
Abstract
The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-um-wide rib and a 2000-um long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the fabrication method and its structure with the improved heat sink, without a bulk substrate between an active region and a bottom heat sink. It is possible to obtain by removing a 400-um-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. For the accurate simulation results, we first carefully verify our simulation result using the experiment results with given parameters by the paper (SPIE vol. 5739 doi: 10.1117/12.588730) and also fitting parameters of carrier lifetime of 4 ns and Auger coefficient of 1 × 10-29 cm6/s inside the quantum well region. We present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. The maximum temperature is expected to be reduced by ~ 390 K at the operating current of 8 A, which is ~ 480 K for the normal structure. As a result, we predict that the characteristics of the laser diode are highly improved, including optical power and beam quality etc..
