Recent published work of depletion-type Si optical modulator with SiGe layer by PETRA and Univ. of Tokyo Congratulations ! Click here to the original web http://iopscience.iop.org/article/10.7567/APEX.11.032201/meta Abstract We developed a high-speed and highly efficient depletion-type Si optical modulator (Si-MOD) with a pn junction by applying a p-type-doped strained SiGe layer, which was stacked on a lateral pn junction-type Si-MOD. We designed an optimum Si-MOD, which is one of the most efficient Si-MODs with a pn junction, and demonstrated highly efficient modulations of 0.67 and 0.81 Vcenterdotcm for V π L at dc reverse bias voltages of −0.5 and −2 Vdc, respectively. We also demonstrated a high-speed operation of 25 Gbps for the Si-MOD at a wavelength of around 1.3 µm.
