Younghyun Kim

Please drop by my new homepage  ;) https://yh2424.github.io/

Congratulations! Jung-Tack! It is quite meaningful for me since he is the first student I advised to research. Indeed, this paper is a good start point. Good luck with your PhD work!

Abstract —Carrier-depletion monolithic III-V/Si optical phase modulators are proposed and numerically investigated. Thanks to the larger carrier-induced refractive index change of the III-Vs compared to Si, the III-V/Si phase modulator is predicted to achieve 0.07-Vcm modulation efficiency at 16-dB/cm optical loss at 1310-nm wavelengths. Poster presentation, GFP, Singapore on 28th Aug, 2019 [ IEEE Web ]

Congratulations ! Minkyu! Abstract We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators (Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero (NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitude-modulation 4 transmitters in the standard SPICE circuit design environment. In detail, you can find a full manuscript! https://www.osapublishing.org/prj/abstract.cfm?uri=prj-7-9-948

Open access available Abstract We present the modulation performance optimization process for a depletion-type Si micro-ring modulator (MRM). Our optimization process is based on two different types of model parameters for ring resonator decay time constants derived from the coupled-mode theory. The MRM figure of merit (FOM) is defined for target data rates considering both optical modulation amplitude and the modulation frequency response based on two model parameters. The parametric optimization for modulator output eye diagrams is achieved by analyzing the FOM with MRM simulation with varying two model parameters. In addition, we demonstrate the optimized eye diagram can be achieved with our optimization process and the measurement results agree well with the simulation result.

New publication available! Abstract We propose a novel heat-sinking structure for a high-power broad-area laser diode. In our laser diode, the pedestal structure is introduced to both top and bottom sides of the laser diode so that the heat generated within the device can be more efficiently released. The characteristics of high-power broad-area laser diodes containing the double pedestal structure are numerically analyzed by self-consistent electro-thermal-optical simulation. It is demonstrated that our laser diode has narrower lateral far-field angle and lower active region temperature compared to previously reported high-power laser diode structures. Link1 Link2

It was great to be invited to talk about Si Photonics and my research achievement in Univ. of Tokyo at a seminar held by KOSEAbe (Korean Scientists & Engineers Association in Belgium).